schottky barrier diode rb160m-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1) small power mold type. (pmdu) 2) low i r. 3) high reliability ? construction silicon epitaxial planer ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit reverse voltage (repetitive peak) v rm v v r v average rectified forward current io a forward current surge peak (60hz / 1cyc) i fsm a tj ? c tstg ? c (*1)mounted on epoxy board. 180 half sine wave ? electrical characteristic (ta=25c) symbol min. typ. max. unit v f 1 - 0.39 0.46 v i f =0.5a v f 2 - 0.43 0.48 v i f =1.0a i r 1 - 3.0 20 ? a v r =15v i r 2 - 9.0 50 ? a v r =30v conditions parameter forward voltage parameter limits 30 reverse voltage (dc) 30 reverse current 1 30 junction temperature 125 storage temperature ? 40 to ? 125 rohm : pmdu jedec :sod-123 manufacture date 0.90.1 1.60.1 2.60.1 3.50.2 0.80.1 0.10.1 0.05 pmdu 1.2 3.05 0.85 4.00.1 2.00.05 1.550.05 1.810.1 4.00.1 1.00.1 3.50.05 1.750.1 8.00.2 0.250.05 1.5max 3.710.1 1/3 2011.04 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb160m-30 ? electrical characteristic curves 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) mounted on epoxy board 0 5 10 15 20 ave:11.7ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs 0 10 20 30 40 50 60 70 80 90 100 forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 0 100 200 300 400 500 600 ta=-25 ta=125 ta=75 ta=25 0.01 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 ta=125 ta=75 ta=25 ta=-25 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 400 410 420 430 440 450 ave:424.2mv ta=25 if=1a n=30pcs ta=25 vr=30v n=30pcs ave:8.172ua 300 310 320 330 340 350 360 370 380 390 400 ave:324.4pf ta=25 f=1mhz vr=0v n=10pcs 0 50 100 150 ave:98.0a 8.3ms ifsm 1cyc 0 50 100 110100 8.3ms ifsm 1cyc 8.3ms 0 50 100 150 110100 t ifsm 1ms im=10ma if=0.5a 300us time 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 dc d=1/2 sin(?180) 2/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb160m-30 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.02 0.04 0.06 0.08 0.1 0 5 10 15 20 sin(?180) dc d=1/2 sin(?180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=15v 0a 0v t tj=125 d=t/t t vr io vr=15v 0a 0v electrostatic discharge test esd(kv) esd dispersion map 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:6.90kv no break at 30kv 3/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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